At present, the fourth generation semiconductor materials are mainly ultra-wide bandgap (UWBG) semiconductor materials represented by diamond (C), gallium oxide (Ga2O3), aluminum nitride (AlN), with a bandgap of more than 4.0 eV. Compared with silicon materials (first generation), gallium nitride (third generation) and silicon carbide (third generation), diamond semiconductor materials have higher carrier mobility, higher breakthrough electric field and greater thermal conductivity. With the highest thermal conductivity at room temperature, diamond can meet the future applicational needs, such as high power, strong electric field and radiation resistance, etc. It is an ideal material for making high power semiconductor devices. It has a broad application prospect in smart grid, rail transportation and other fields.
Saturation drift speed /
Carrier Mobility /
|Semiconductor Materials||Bandgap/eV||Electronic||Empty cave||Electronic||Empty cave||Breakthrough electric field/ (MV/cm)||Dielectric constant||Thermal conductivity/(W/mK)|
|Diamond||5.47||2.5||1.4||4 500||3 800||10||5.7||2 200|